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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616
LED ARRAY
LA08B/1H3Y1G
DATA SHEET
DOC. NO : REV. DATE : :
QW0905-L A08B/1H3Y1G B 23 - Nov - 2004
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA08B/1H3Y1G Page 1/6
Package Dimensions
H Y Y Y G
5.3 5.0 4.4 6.8X4=27.2 1.8 7.2
35.750.5 2.0 5.9 7.9
1/4
0.5 TYP
12.5MIN
-+ LH5520 LG5520 LY5520
2.3TYP
1.0MIN
3.8
5.3 6.0
1.8
8.0 2.0
1.5MAX 12.5MIN
1/4
0.5 TYP
1.0MIN 2.3TYP
Note : 1.All dimension are in millimeter tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA08B/1H3Y1G Page 2/6
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol H Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir Topr Tstg Tsol 15 60 40 Y 20 80 60 10 -40 ~ +85 -40 ~ +100 Max 260J for 5 sec Max (2mm from body) G 30 120 100 mA mA mW UNIT
g A J J
Typical Electrical & Optical Characteristics (Ta=25 J )
PART NO
MATERIAL Emitted GaP Red
COLOR
Forward Peak Spectral voltage wave halfwidth @ 20mA(V) length f nm f Pnm
Luminous intensity
@10mA(mcd)
Viewing angle 2c 1/2 (deg)
Lens Red Diffused 697 585 565 90 35 30
Min. Max. Min. 1.7 1.7 1.7 2.6 2.6 2.6 0.5 1.2 1.8
Typ. 1.5 2.5 3.0 142 142 142
LA08B/1H3Y1G
GaAsP/GaP Yellow Yellow Diffused GaP Green Green Diffused
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA08B/1H3Y1G Page 3/6
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.0
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.0 3.0 4.0 5.0
2.5 2.0 1.5 1.0 0.5 0.0
10 1.0
0.1 1.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA Normalize @25J
0 20 40 60 80 100
Forward Voltage@20mA Normalize @25J
1.2
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1 1.0
0.9 0.8 -40 -20
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 600 700 800 900 1000
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA08B/1H3Y1G Page 4/6
Typical Electro-Optical Characteristics Curve
Y CHIP
Fig.1 Forward current vs. Forward Voltage
1000
Fig.2 Relative Intensity vs. Forward Current
3.0
Forward Current(mA)
100 10 1.0
Relative Intensity Normalize @20mA
2.0 3.0 4.0 5.0
2.5 2.0 1.5 1.0 0.5 0.0
0.1 1.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA Normalize @25J
Forward Voltage@20mA Normalize @25J
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1
1.0 0.9 0.8 -40 -20 0 20 40 60 80 100
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650 700
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA08B/1H3Y1G Page 5/6
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.5
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
10 1.0
0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25J
1.1 1.0
0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25J
1.2
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
1.0
Relative Intensity @20mA
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LA08B/1H3Y1G Page 6/6
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles
5J
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 J O 5J 2.Dwell time= 10 O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 J O 5J 2.Dwell time=5 O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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